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Inchange Semiconductor
KTA1276
DESCRIPTION - Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) - Good Linearity of h FE - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -5 Collector Current-Continuous Total Power Dissipation @ TC=25℃ Junction Temperature -3 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance, Junction to...