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KTA1276 Datasheet Preview

KTA1276 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -30V(Min)
·Good Linearity of hFE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-30
V
VCEO Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
-3
A
20
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
-55~150
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance, Junction to Ambient
63
/W
KTA1276
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KTA1276 Datasheet Preview

KTA1276 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
KTA1276
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -2V
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -2.5A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -0.5A;VCE= -2V
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
MIN TYP. MAX UNIT
-30
V
-30
V
-5
V
-0.8
V
-1.0
V
-1.0 μA
-1.0 μA
70
240
25
100
MHz
40
pF
hFE-1 Classifications
O
Y
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KTA1276
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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KTA1276 Datasheet PDF





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