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KTA968A Datasheet Preview

KTA968A Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
KTA968A
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -180V(Min)
·Good Linearity of hFE
·Complement to Type KTC2238A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
-1.5
A
25
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
-55~150
SYMBOL
PARAMETER
Rth j-a Thermal Resistance, Junction to Ambient
MAX
63
UNIT
/W
THERMAL CHARACTERISTICS
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KTA968A Datasheet Preview

KTA968A Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
KTA968A
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IB= 0
-180
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
-180
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
-1.5
V
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -5V
-1.0
V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
-1.0 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1.0 μA
hFE
DC Current Gain
IC= -0.1A; VCE= -5V
70
240
fT
Current-Gain—Bandwidth Product
IC= -0.1A;VCE= -10V
100
MHz
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
30
pF
hFEClassifications
O
Y
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KTA968A
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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KTA968A Datasheet PDF





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