Datasheet Details
| Part number | KTA968A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.32 KB |
| Description | PNP Transistor |
| Download | KTA968A Download (PDF) |
|
|
| Part number | KTA968A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.32 KB |
| Description | PNP Transistor |
| Download | KTA968A Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type KTC2238A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 25 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -55~150 ℃ SYMBOL PARAMETER Rth j-a Thermal Resistance, Junction to Ambient MAX 63 UNIT ℃/W THERMAL CHARACTERISTICS isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTA968A ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
isc Silicon PNP Power Transistor KTA968A.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTA968A | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
|
KTA968 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
| Part Number | Description |
|---|---|
| KTA1046 | PNP Transistor |
| KTA1276 | PNP Transistor |
| KTA1381 | PNP Transistor |