Datasheet Details
| Part number | KTC2020D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 286.61 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KTC2020D-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor KTC2020D.
| Part number | KTC2020D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 286.61 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KTC2020D-INCHANGE.pdf |
|
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·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;
IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTC2020D | NPN Transistors | Kexin |
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