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KTC2238 Datasheet Preview

KTC2238 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
KTC2238
DESCRIPTION
·Low Saturation Voltage-
: VCE(sat)=1.5V(Max)@ (IC= 0.5A, IB= 50mA)
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
·Complement to Type KTA968
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
IE
Emitter Current
PC
Collector Power Dissipation
TC=25
Tj
Junction Temperature
1.5
A
25
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
-55~150
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance, Junction to Ambient
63
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KTC2238 Datasheet Preview

KTC2238 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.1A ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V,ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
hFE Classifications
O
Y
70-140 120-240
KTC2238
MIN TYP MAX UNIT
160
V
160
V
5
V
1.5
V
1.0
V
1
uA
1
uA
70
240
25
pF
100
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KTC2238
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

KTC2238 Datasheet PDF





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