Datasheet Details
| Part number | KTC3229 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.63 KB |
| Description | NPN Transistor |
| Download | KTC3229 Download (PDF) |
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| Part number | KTC3229 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.63 KB |
| Description | NPN Transistor |
| Download | KTC3229 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A IB Base Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 mA 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTC3229 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA;
IB= 1mA ICBO Collector Cutoff Current VCB= 240V;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTC3229 | NPN Transistor | JCET |
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KTC3229 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
 |
KTC3229 | SILICON POWER TRANSISTOR | SavantIC |
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