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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KTC3503
DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Silicon NPN epitaxial planar transistor ·Small reverse transfer capacitance and excellent high
frequency characteristic ·Complement to KTA1381 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For high definition CRT display ,video output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ Tc=25℃
TJ
Junction Temperature
0.
KTC3503 Datasheet
