Datasheet Details
| Part number | KTD1351 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.77 KB |
| Description | NPN Transistor |
| Datasheet |
 KTD1351 Datasheet
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| Part number | KTD1351 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.77 KB |
| Description | NPN Transistor |
| Datasheet |
KTD1351 Datasheet
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·Low Saturation Voltage- : VCE(sat)=1.0V(Max)@ (IC= 2A, IB=0.2A) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Complement to Type KTB988 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 0.5 A 30 W 2.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTD1351 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
isc Silicon NPN Power Transistors.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTD1351 | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
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KTD1351 | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
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KTD1351 | NPN Transistor | JCET |
| Part Number | Description |
|---|---|
| KTD600K | NPN Transistor |