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KTD1351 Datasheet Preview

KTD1351 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
DESCRIPTION
·Low Saturation Voltage-
: VCE(sat)=1.0V(Max)@ (IC= 2A, IB=0.2A)
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Complement to Type KTB988
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
IB
Base Current
Collector Power Dissipation
TC=25
PC
Collector Power Dissipation
Ta=25
Tj
Junction Temperature
0.5
A
30
W
2.0
150
Tstg
Storage Temperature Range
-55~150
KTD1351
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

KTD1351 Datasheet Preview

KTD1351 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 0.5A ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V,ftest= 1MHz
fT
Current-Gain—Bandwidth Product
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 0.5A ; VCE= 5V
IC= 2.0A ,IB1= -IB2= 0.2A
hFE Classifications
O
Y
GR
60-120 100-200 150-300
KTD1351
MIN TYP MAX UNIT
60
V
1.0
V
1.0
V
100
uA
100
uA
60
300
35
pF
3.0
MHz
0.65
μs
1.3
μs
0.65
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number KTD1351
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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KTD1351 Datasheet PDF





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