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Inchange Semiconductor
KTD1351
DESCRIPTION - Low Saturation Voltage- : VCE(sat)=1.0V(Max)@ (IC= 2A, IB=0.2A) - High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) - plement to Type KTB988 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 30 W ℃ Tstg Storage Temperature Range -55~150 ℃ KTD1351 isc website:...