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KTD1351 - NPN Transistor

KTD1351 Description

isc Silicon NPN Power Transistors .
Low Saturation Voltage- : VCE(sat)=1. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Compleme.

KTD1351 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current Collector Power

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Datasheet Details

Part number
KTD1351
Manufacturer
INCHANGE
File Size
198.77 KB
Datasheet
KTD1351-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE KTD1351-like datasheet