MBR10100FCT Datasheet | Inchange Semiconductor

Features - Low Forward Voltage - 150℃ Operating Junction Temperature - Guaranteed Reverse Avalanche - Low Power Loss/High Efficiency - High Surge Capacity - Low Stored Charge Majority Carrier Conduction - Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS - Case: Epoxy, Molded - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable INCHANGE Semiconductor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM IF(AV) IFSM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 100℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60Hz) Junction Temperature VALUE UNIT -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website：.iscsemi....