MBR1650CT
FEATURES
- Schottky Barrier Chip
- Low Power Loss/High Efficiency
- High current capability，low forward voltage drop
- High surge capability
- Guardring for overvoltage protection
- High temperature soldering guaranteed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
IF(AV) IFSM TJ
Average Rectified Forward Current (Rated VR)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
A wave, single phase, 60Hz)
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Schottky Barrier...
