MBR60100CT Datasheet | Inchange Semiconductor

Features - Metal silicon junction, majority carrier conduction - Low leakage current, low power loss, high efficiency - Dual rectifier construction, positive center tap - Guardring for overvoltage protection - High frequency operation - Low stored charge majority carrier conduction - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching power supply - Converters - Free-Wheeling diodes - Reverse battery protection - Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRMS Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current Top device Per leg 60 30 Nonrepetitive Peak Surge Current IFSM (8.3ms single half sine-wave superimposed on A rated load conditions) IRRM...