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MBRD10100CT - Schottky Barrier Rectifier

Key Features

  • With TO-251(DPKE) package.
  • Schottky Barrier Chip.
  • Guard Ring Die Construction for Transient Protection.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • High Current Capability and Low Forward Voltage Drop.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBRD10100CT FEATURES ·With TO-251(DPKE) package ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss,High Efficiency ·High Surge Capability ·High Current Capability and Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency switching ·High efficiency SMPS ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 100℃ Non-repetitive Peak Surge Current 8.