MBRD835
MBRD835 is Schottky Barrier Rectifier manufactured by Inchange Semiconductor.
FEATURES
- Schottky barrier chip
- Low Power Loss,High Efficiency
- Guard ring for transient protection
- High Operating Junction Temperature
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For use in high frequency rectifier of switching mode power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed on 175
A rated load conditions
Junction Temperature
-65~125 ℃
Tstg
Storage Temperature Range
-65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
Maximum Instantaneous Forward...
