Download MCR106-8 Datasheet PDF
Inchange Semiconductor
MCR106-8
FEATURES - Low Thermal Resistance - High Heat Dissipation and Durability - Designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems and etc. - Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER UNIT VDRM VRRM IT(AV) IT(RMS) PGM PG(AV) Tj Repetitive peak off-state voltage Repetitive peak off-state voltage Average on-state current TC=93℃ on-state RMScurrent TC=93℃ Peak gate power TC=93℃ Average gate power TC=93℃ Operating junction temperature ℃ Tstg Storage temperature -40~+ 150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRRM=400V VRRM=400V, Tj= 110℃ IDRM Repetitive peak off-state current VDRM=400V VDRM=400V, Tj= 110℃ Gate trigger current VD= 7V;...