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MCR225-10FP Datasheet Thyristors

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors INCHANGE Semiconductor MCR225-10FP.

General Description

·With TO-220F packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·AC power controller ·Motor control ·Power converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) ITSM PG(AV) Average forward current Surge non-repetitive on-state current ( 1/2 cycle, 60HZ,sine wave;Tc=70℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tc=85℃ MIN 800 800 25 340 0.5 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 50A IGT Gate-trigger current VD = 12V,RL=100Ω VGT Gate-trigger voltage VD = 12V,RL=100Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 2 mA 1.8 V 40 mA 1.5 V 1.5 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

The information contained herein is presented only as a guide for the applications of our products.

ISC products are intended for usage in general electronic equipment.

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