isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MDF10N60GTH
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=5.3A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0V
VSDF
Diode forward voltage
ISD=10A, VGS = 0V
600
V
3
5
V
580 700
mΩ
±0.1 μA
1
μA
1.4
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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