MDP10N055 - N-Channel MOSFET

Datasheet Summary

Features

With TO-220 packaging.
High speed switching.
Very high commutation ruggedness.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

INCHANGE

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Datasheet Details

Part number	MDP10N055
Manufacturer	INCHANGE
File Size	202.52 KB
Description	N-Channel MOSFET
Datasheet	MDP10N055 Datasheet
Additional preview pages of the MDP10N055 datasheet.

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconductor MDP10N055 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 130 92 480 PD Total Dissipation 188 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Cha

Published: Sep 4, 2020 |