MDP1923TH - N-Channel MOSFET

Inchange Semiconductor

Key Features

With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

MDP1923TH n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	MDP1923TH
Manufacturer	Inchange Semiconductor
File Size	202.03 KB
Description	N-Channel MOSFET
Datasheet	MDP1923TH Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDP1923TH ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM PD Tj Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed Total Dissipation @TC=25℃ TC=100℃ Operating Junction Temperature ±20 69 44 276 139 56 -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.9 62.