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MDP1923TH - N-Channel MOSFET

MDP1923TH Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDP1923TH *.

MDP1923TH Features

* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

MDP1923TH Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM PD Tj Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed Total Dissipation @TC=25℃ TC=100℃ Operating Junction Temperat

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Datasheet Details

Part number
MDP1923TH
Manufacturer
INCHANGE
File Size
202.03 KB
Datasheet
MDP1923TH-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE MDP1923TH-like datasheet