MJ11015
MJ11015 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
- High DC Current Gain-
: h FE= 1000(Min.)@IC= -20A
- Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A
- plement to the NPN MJ11016
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as output devices in plementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
Collector Current-Continunous
-30
Base Current-Continunous
Collector Power Dissipation @TC=25℃
Tj
Junction...
