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MJ11015 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= -20A Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A Complement to the NPN MJ11016 Minimum Lot-to-Lot variations for robust device performance and re

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A ·Complement to the NPN MJ11016 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11015 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
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