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MJ13333 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

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General Description

· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) · Reversed Biased SOA with Inductive Loads ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 175 W Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJ13333 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;

IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A;

IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A;

Overview

isc Silicon NPN Power Transistor.

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