Datasheet Details
| Part number | MJ13335 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.87 KB |
| Description | NPN Transistor |
| Download | MJ13335 Download (PDF) |
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| Part number | MJ13335 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.87 KB |
| Description | NPN Transistor |
| Download | MJ13335 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJ13335 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A;
IB= 1.5A IC= 10A;
isc Silicon NPN Power Transistor.
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