Datasheet Details
| Part number | MJ14002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.72 KB |
| Description | NPN Transistor |
| Datasheet | MJ14002-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | MJ14002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.72 KB |
| Description | NPN Transistor |
| Datasheet | MJ14002-INCHANGE.pdf |
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·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PD Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation Max.Junction Temperature 80 V 80 V 5 V 60 A 15 A 300 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.58 ℃/W isc website： .iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ14002 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 250mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 25A ,IB= 2.5A VCE(sat)2 Collector-Emitter Saturation Voltage IC= 50A ,IB= 5.0A VCE(sat)3 Collector-Emitter Saturation Voltage IC= 60A ,IB= 12A VBE(sat)1 Base-Emitter Saturation Voltage IC= 25A ,IB= 2.5A VBE(sat)2 Base-Emitter Saturation Voltage IC= 50A ,IB= 5.0A VBE(sat)3 Base-Emitter Saturation Voltage IC= 60A ,IB= 12A ICBO Collector Cutoff Current VCB=80V, IE= 0 ICEO Collector Cutoff Current VCE= 40V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V;
IC= 0 hFE-1 DC Current Gain IC= 25A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ14002 | Bipolar NPN Device | Seme LAB |
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MJ14002 | Complementary Silicon Power Transistors | ON |
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MJ14002 | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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