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MJ15004 - PNP Transistor

Description

High DC Current Gain- : hFE= 25(Min)@IC= -5A Wide Area of Safe Operation Complement to Type MJ15003 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

and other linear applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25(Min)@IC= -5A ·Wide Area of Safe Operation ·Complement to Type MJ15003 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high power audio,disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A IB Base Current-Continuous -5 A PD Total Power Dissipation@TC=25℃ 250 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.
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