MJB13007 - NPN Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Collector Saturation Voltage: VCE(sat) = 2.0(Max) @ IC= 5.0A Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi

INCHANGE

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Datasheet Details

Part number	MJB13007
Manufacturer	INCHANGE
File Size	213.72 KB
Description	NPN Transistor
Datasheet	MJB13007 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage: VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.

Published: Sep 9, 2020 |