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MJB13007 Datasheet Preview

MJB13007 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage: VCE(sat) = 2.0(Max) @ IC= 5.0A
·Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
16
A
IB
Base Current
4
A
IBM
Base Current-Peak
8
A
IE
Emitter Current
12
A
IEM
Emitter Current-Peak
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
24
A
80
W
150
-65~150
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.56 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
MJB13007
iisc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

MJB13007 Datasheet Preview

MJB13007 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
MJB13007
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
400
V
VCE(sat)-1
VCE(sat)-2
VCE(sat)-3
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC= 2A ;IB= 0.4A
IC= 5A ;IB= 1A
TC= 100
IC= 8A ;IB= 2A
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A ;IB= 0.4A
IC= 5A ;IB= 1A
TC= 100
VCES= 700V; VBE(off)= 1.5V
TC= 125
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 2A; VCE= 5V
8
1.0
V
2.0
3.0
V
3.0
V
1.2
V
1.6
1.5
V
0.1
1.0
mA
0.1 mA
40
hFE-2
fT
COB
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
IC= 5A; VCE= 5V
IC= 0.5 A; VCE= 10V;
IE= 0; VCB= 10V; ftest = 0.1MHz
5
30
4
MHz
80
pF
Switching Times; Resistive Load
td
Storage Time
0.1 μs
tr
Fall Time
ts
Storage Time
IC= 5A; VCC= 125V;
IB1= IB2= 1A; tp= 25μs;
Duty Cycle1%
1.5 μs
3.0 μs
tf
Fall Time
0.7 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
iisc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number MJB13007
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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