Datasheet Details
| Part number | MJB13007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.72 KB |
| Description | NPN Transistor |
| Download | MJB13007 Download (PDF) |
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| Part number | MJB13007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.72 KB |
| Description | NPN Transistor |
| Download | MJB13007 Download (PDF) |
|
|
|
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage: VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-peak 16 A IB Base Current 4 A IBM Base Current-Peak 8 A IE Emitter Current 12 A IEM Emitter Current-Peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 24 A 80 W 150 ℃ -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W MJB13007 iisc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJB13007 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
isc Silicon NPN Power Transistor.
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