Datasheet Details
| Part number | MJB2955 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.24 KB |
| Description | PNP Transistor |
| Datasheet |
 MJB2955 Datasheet
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| Part number | MJB2955 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.24 KB |
| Description | PNP Transistor |
| Datasheet |
MJB2955 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= -4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W MJB2955 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJB2955 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
isc Silicon PNP Power Transistor.
| Part Number | Description |
|---|---|
| MJB13007 | NPN Transistor |
| MJB3055 | NPN Transistor |
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| MJB32C | NPN Transistor |