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MJB2955 - PNP Transistor

MJB2955 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min). High DC Current Gain- : hFE= 20-100@IC= -4A. 100% avalanche tested. Mini.

MJB2955 Applications

* Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A

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Datasheet Details

Part number
MJB2955
Manufacturer
INCHANGE
File Size
183.24 KB
Datasheet
MJB2955-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJB2955-like datasheet