Inchange Semiconductor MJD5731
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJD5731 |
|---|---|
| Datasheet | MJD5731 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min)●High Switching speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO VEBO IC ICM PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -350 V -5 V -1.0 A -3.0 A 15 W 1.56 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.33 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W MJD5731 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJD5731ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARA...