Datasheet Details
| Part number | MJE13070 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.45 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | MJE13070-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | MJE13070 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.45 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | MJE13070-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071 · Collector-Emitter Saturation Voltage: VCE(sat) = 3.0V(Min)@IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed, power switching in inductive circuits, where fall time is critical.They are particularly suited for line-operated switchmode applications such as switching regulators , inverters , DC-DC converter, motor controls, solenoid drive and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage MJE13070 650 V MJE13071 750 VCEO Collector-Emitter Voltage MJE13070 400 V MJE13071 450 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJE13070/13071 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc Website：.iscsemi.
MAX UNIT 1.56 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJE13070/13071 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage MJE13070 MJE13071 IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE13070 | NPN POWER TRANSISTORS | GE |
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