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MJE15037 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor MJE15037.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -250V(Min) ·DC current gain - : hFE = 5000 (Min) @IC= -0.5 A : hFE = 3000 (Min) @IC= -2.0 A ·Complement to Type MJE15036 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -8 A IB Base Current Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ Tj Junction Temperature -2 A 2 W 50 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1A ;

VCE= -5V ICBO Collector Cutoff Current VCB= -250V;

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