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MJE16002 - NPN Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed switching of inductive circuits where fall time

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJE16002 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical.
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