isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJE16002
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 450V(Min.)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage, high-speed switching of
inductive circuits where fall time and RBSOA are critical.
they are particularly well-suited for line-operated switch-
mode applications such as:
·Switching Regulators
·High resolution deflection circuits
·Inverters
·Motor drive
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-peak
IB
Base Current
IBM
Base Current-Peak
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
850
V
450
V
6
V
5
A
10
A
4
A
8
A
80
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
isc website：www.iscsemi.com
MAX UNIT
1.56 ℃/W
1 isc & iscsemi is registered trademark
