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INCHANGE

MJE16002 Datasheet Preview

MJE16002 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJE16002
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 450V(Min.)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage, high-speed switching of
inductive circuits where fall time and RBSOA are critical.
they are particularly well-suited for line-operated switch-
mode applications such as:
·Switching Regulators
·High resolution deflection circuits
·Inverters
·Motor drive
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-peak
IB
Base Current
IBM
Base Current-Peak
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
850
V
450
V
6
V
5
A
10
A
4
A
8
A
80
W
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
isc websitewww.iscsemi.com
MAX UNIT
1.56 /W
1 isc & iscsemi is registered trademark




INCHANGE

MJE16002 Datasheet Preview

MJE16002 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJE16002
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A ;IB= 0.2A
VCE(sat)-2
VBE(sat)
ICBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 3A ;IB= 0.4A
TC= 100
IC= 3A ;IB= 0.4A
TC= 100
VCB= 850V; IE= 0
TC= 100
ICEO
Collector Cutoff Current
VCE= 450V;TC= 100
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest = 1.0kHz
Switching Times; Resistive Load
td
Storage Time
tr
Fall Time
ts
Storage Time
IC= 3A; VCC= 250V;
IB1= 0.4A;IB2= 0.8A; RB2= 8Ω;
PW= 30μs; Duty Cycle2%
tf
Fall Time
MIN TYP. MAX UNIT
450
V
1.0
V
2.5
2.5
V
1.5
1.5
V
0.25
1.5
mA
2.5 mA
1.0 mA
5
200
pF
0.1 μs
0.3 μs
3.0 μs
0.3 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number MJE16002
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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MJE16002 Datasheet PDF





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