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MJE180 - NPN Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 40 V DC Current Gain : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A Complement to the PNP MJE170 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS L

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isc Silicon NPN Power Transistor MJE180 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 40 V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to the PNP MJE170 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-peak 6 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature 1 A 1.5 W 12.
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