Datasheet Details
| Part number | MJE181 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.12 KB |
| Description | NPN Transistor |
| Download | MJE181 Download (PDF) |
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| Part number | MJE181 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.12 KB |
| Description | NPN Transistor |
| Download | MJE181 Download (PDF) |
|
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·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 60V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to the PNP MJE171 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 ICM Collector Current-peak 6 IB Base Current 1 Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ 1.5 12.5 Ti Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 83.4 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A ;IB= 0.15 A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A ;IB= 0.6 A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1.5A;
IB= 0.15A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Power Transistor MJE181.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE181 | NPN PLASTIC POWER TRANSISTORS | CDIL |
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MJE181 | POWER TRANSISTOR | Central Semiconductor |
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MJE181 | NPN Epitaxial Silicon Transistor | Fairchild |
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MJE181 | 3 AMPERE POWER TRANSISTORS | Motorola |
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MJE181 | Complementary Plastic Silicon Power Transistors | ON Semiconductor |
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|---|---|
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