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MJE5742H NPN Transistor

MJE5742H Description

isc Silicon NPN Darlington Power Transistor MJE5742H .
Collector-Emitter Breakdown Voltage : VCEO= 400V(Min). Low Collector-Emitter Saturation Voltage. Minimum Lot-to-Lot variations for robus.

MJE5742H Applications

* Switching Regulators
* Inverters
* Solenoid and relay drivers
* Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Base Voltage 650 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Co

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Datasheet Details

Part number
MJE5742H
Manufacturer
INCHANGE
File Size
253.01 KB
Datasheet
MJE5742H-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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