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MJE5742H - NPN Transistor

Description

Collector-Emitter Breakdown Voltage : VCEO= 400V(Min) Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators Inverters Solenoid and relay drivers Motor control

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isc Silicon NPN Darlington Power Transistor MJE5742H DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= 400V(Min) · Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·Inverters ·Solenoid and relay drivers ·Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Base Voltage 650 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak IB Base Current- Continuous IBM ---Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 16 A 2.
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