isc Silicon NPN Darlington Power Transistor
MJE5742H
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: VCEO= 400V(Min)
· Low Collector-Emitter Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching Regulators
·Inverters
·Solenoid and relay drivers
·Motor control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Base Voltage
650
V
VCEO(SUS) Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
IB
Base Current- Continuous
IBM
---Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
16
A
2.5
5
A
80
W
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.56 ℃/W
1.55KΩ 0.94KΩ
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