| Part number | MJE5742H |
|---|---|
| Datasheet | MJE5742H-INCHANGE.pdf |
| File Size | 253.01 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 ICEV Collector Cutoff Current VCEV=650V,Tc=25℃ Tc=100℃ IEBO Emitter Cutoff Current VEB= 8V; MAX UNIT 400 V 1 5 mA 10 mA hFE DC Current Gain IC= 0.5A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJE5742 | POWER DARLINGTON TRANSISTORS | Motorola |
 |
MJE5742 | NPN Silicon Power Darlington Transistor | ON Semiconductor |
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