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MJE5742H Datasheet Preview

MJE5742H Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
MJE5742H
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: VCEO= 400V(Min)
· Low Collector-Emitter Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching Regulators
·Inverters
·Solenoid and relay drivers
·Motor control
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Base Voltage
650
V
VCEO(SUS) Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
IB
Base Current- Continuous
IBM
---Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
16
A
2.5
5
A
80
W
-65~150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.56 /W
1.55KΩ 0.94KΩ
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

MJE5742H Datasheet Preview

MJE5742H Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0
ICEV
Collector Cutoff Current
VCEV=650V,Tc=25
Tc=100
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
MJE5742H
MIN TYP. MAX UNIT
400
V
1
5
mA
10
mA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
IC= 4A; VCE= 5V
700
2000
VCE(sat) Collector-Emitter Saturation Voltage
V BE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.2A
IC= 8A; IB= 0.4A
IC= 4A; IB= 0.2A,Tc=100
IC= 4A; IB= 0.2A
IC= 8A; IB= 0.4A
IC= 4A; IB= 0.2A,Tc=100
TYPICAL CHARACTERISTICS DC Current Gain
2.0
3.0
V
2.2
2.5
3.5
V
2.4
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number MJE5742H
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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MJE5742H Datasheet PDF





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