Datasheet Details
| Part number | MJF13009 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.73 KB |
| Description | NPN Transistor |
| Download | MJF13009 Download (PDF) |
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| Part number | MJF13009 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.73 KB |
| Description | NPN Transistor |
| Download | MJF13009 Download (PDF) |
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 24 A IB Base Current 6 A IBM Base Current-Peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 12 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A ;IB= 3A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A ;IB= 1A VBE(sat)-2 Base-Emitter Saturation Voltage ICEV Collector Cutoff Current IEBO Emitter Cutoff Current IC= 8A ;IB= 1.6A VCEV= 700V;
isc Silicon NPN Power Transistor MJF13009.
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