Datasheet Details
| Part number | MJF18006 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.88 KB |
| Description | NPN Transistor |
| Download | MJF18006 Download (PDF) |
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| Part number | MJF18006 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.88 KB |
| Description | NPN Transistor |
| Download | MJF18006 Download (PDF) |
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·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 6 A ICM Collector Current-Peak 15 A IB Base Current 4 A IBM Base Current-Peak 8 A PD Total Power Dissipation@TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W MJF18006 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage CONDITIONS IC=30mA;
IB= 0 IC= 1.5 A ;IB= 0.15A TC=125℃ IC= 3A ;IB= 0.6A TC=125℃ IC= 1.5A;
IB= 0.15A VBE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current IC= 3A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJF18006 | POWER TRANSISTOR | Motorola |
 |
MJF18006 | SILICON POWER TRANSISTOR | SavantIC |
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