Datasheet Details
| Part number | MJF44H11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.51 KB |
| Description | NPN Transistor |
| Download | MJF44H11 Download (PDF) |
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| Part number | MJF44H11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.51 KB |
| Description | NPN Transistor |
| Download | MJF44H11 Download (PDF) |
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·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 8A ·Fast Switching Speeds ·Complement to Type MJF45H11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 20 A 36 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W MJF44H11 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4 A VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A ICES Collector Cutoff Current VCE=Rated VCEO;
isc Silicon NPN Power Transistors.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJF44H11 | Complementary Power Transistors | ON |
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MJF44H11 | SILICON POWER TRANSISTOR | SavantIC |
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