Datasheet4U Logo Datasheet4U.com

MJH11012 Datasheet - INCHANGE

NPN Transistor

MJH11012 General Description

*Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@IC= 20A *Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A *Complement to the PNP MJ11011 *Minimum Lot-to-Lot variations for robust device performance and reliable.

MJH11012 Datasheet (213.68 KB)

Preview of MJH11012 PDF

Datasheet Details

Part number:

MJH11012

Manufacturer:

INCHANGE

File Size:

213.68 KB

Description:

Npn transistor.

📁 Related Datasheet

MJH11017 Silicon PNP Darlington Power Transistor (Inchange Semiconductor)

MJH11017 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

MJH11017 Complementary Darlington Silicon Power Transistors (ON)

MJH11018 Silicon NPN Power Transistor (Inchange Semiconductor)

MJH11018 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

MJH11018 Complementary Darlington Silicon Power Transistors (ON)

MJH11019 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

MJH11019 Complementary Darlington Silicon Power Transistors (ON)

MJH11020 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

MJH11020 Complementary Darlington Silicon Power Transistors (ON)

TAGS

MJH11012 NPN Transistor INCHANGE

Image Gallery

MJH11012 Datasheet Preview Page 2

MJH11012 Distributor