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MJH11012 Datasheet Preview

MJH11012 Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
MJH11012
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 20A
·Low Collector Saturation Voltage-
: VCE (sat)= 3.0V(Max.)@ IC= 20A
·Complement to the PNP MJ11011
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
30
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continunous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
1
A
150
W
200
Tstg
Storage Temperature Range
-55~+200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.87 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

MJH11012 Datasheet Preview

MJH11012 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 0.2A
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 0.3A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 30A; IB= 0.3A
VCB=60V; IE=0
VCB=60V; IE=0; TC=150
VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 20A, VCE= 5V
hFE-2
DC Current Gain
IC= 30A, VCE= 5V
MJH11012
MIN TYP. MAX UNIT
60
V
3.0
V
4.0
V
3.5
V
5.0
V
1.0
5.0
mA
1.0 mA
5.0 mA
1000
200
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number MJH11012
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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