Datasheet Details
| Part number | MJH16008 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.86 KB |
| Description | NPN Transistor |
| Download | MJH16008 Download (PDF) |
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| Part number | MJH16008 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.86 KB |
| Description | NPN Transistor |
| Download | MJH16008 Download (PDF) |
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· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.
They are particularly suited for line operated switch-mode applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 6 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 12 A 125 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJH16008 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=3mA ;
isc Silicon NPN Power Transistor.
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