Datasheet Details
| Part number | MJW18020G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.98 KB |
| Description | NPN Transistor |
| Datasheet |
 MJW18020G Datasheet
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| Part number | MJW18020G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.98 KB |
| Description | NPN Transistor |
| Datasheet |
MJW18020G Datasheet
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·With TO-247 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9.0 V IC Collector Current-Continuous 45 A IB Base Current 10 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor MJW18020G.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJW18020 | NPN Silicon Power Transistors | ON |
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MJW18020 | Silicon NPN Power Transistor | Inchange Semiconductor |
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