Datasheet Details
| Part number | MJW21191 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.10 KB |
| Description | PNP Transistor |
| Download | MJW21191 Download (PDF) |
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| Part number | MJW21191 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.10 KB |
| Description | PNP Transistor |
| Download | MJW21191 Download (PDF) |
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·DC Current Gain Specified up to 8.0 Amperes at Temperature ·High SOA: 20 A, 18 V, 100 ms ·TO–3PN Package ·Complement to Type MJW21192 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·designed for power audio output, or high power drivers in audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Pulse 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 100 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.65 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 50 ℃/W MJW21191 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJW21191 | 8.0 AMPERES POWER TRANSISTORS | Motorola |
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MJW21191 | POWER TRANSISTORS | ON |
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MJW21191 | SILICON POWER TRANSISTOR | SavantIC |
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