Datasheet Details
| Part number | MJW21193 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.42 KB |
| Description | PNP Transistor |
| Datasheet | MJW21193-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | MJW21193 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.42 KB |
| Description | PNP Transistor |
| Datasheet | MJW21193-INCHANGE.pdf |
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•Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 20 Min @ I C = -8 Adc ·Complement to Type MJW21194 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A ICM Collector Current-Pulse -30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 200 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.7 ℃/W 40 ℃/W MJW21193 isc Website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJW21193 | PNP Silicon Power Transistor | ON Semiconductor |
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