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MMD65R900QRH N-Channel MOSFET

MMD65R900QRH Description

Isc N-Channel MOSFET Transistor MMD65R900QRH *.

MMD65R900QRH Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

MMD65R900QRH Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 4.7 3.0 14.1 PD Total Dissipation @TC=25℃ 34.7 Tch Max. Operat

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Datasheet Details

Part number
MMD65R900QRH
Manufacturer
INCHANGE
File Size
196.62 KB
Datasheet
MMD65R900QRH-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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