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Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·Low power loss ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·DC – DC Converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
PD
Total Dissipation
Tch
Max.
MMIS70R900PTH Datasheet
