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MMIS70R900PTH Datasheet Preview

MMIS70R900PTH Datasheet

N-Channel MOSFET

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Isc N-Channel MOSFET Transistor
·FEATURES
·With TO-251(IPAK) packaging
·Low power loss
·High speed switching
·Low on-resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·DC DC Converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25
TC=100
Drain Current-Single Pulsed
PD
Total Dissipation
Tch
Max. Operating Junction Temperature
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c)
Channel-to-case thermal resistance
Rth(ch-a)
Channel-to-ambient thermal resistance
INCHANGE Semiconductor
MMIS70R900PTH
VALUE
700
±30
5
3
15
40
150
-55~150
UNIT
V
V
A
A
W
MAX
3.1
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

MMIS70R900PTH Datasheet Preview

MMIS70R900PTH Datasheet

N-Channel MOSFET

No Preview Available !

Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MMIS70R900PTH
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS= ±30V; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
IGSS
Gate-Source Leakage Current
VGS= 10V; ID=1.5A
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=700V; VGS= 0V;
VSDF
Diode forward voltage
ISD=5A, VGS = 0 V
MIN TYP MAX UNIT
700
V
2
4
V
810 900
mΩ
±0.1 μA
1
μA
1.4
V
TO-251 OUTLINE DIMENSIONAL DRAWING
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number MMIS70R900PTH
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
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