MMIS70R900PTH
MMIS70R900PTH is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- With TO-251(IPAK) packaging
- Low power loss
- High speed switching
- Low on-resistance
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
- DC
- DC Converters
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
Total Dissipation
Tch
Max. Operating Junction Temperature
Tstg
Storage Temperature
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c)
Channel-to-case thermal resistance
Rth(ch-a)
Channel-to-ambient thermal resistance
INCHANGE Semiconductor
VALUE 700 ±30 5 3 15 40 150
-55~150
UNIT V V A A W ℃ ℃
MAX 3.1 62.5
UNIT ℃/W ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered...
