MP1620 - PNP Transistor

Datasheet Summary

Description

With TO-3PN packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to type MJH6284 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	MP1620
Manufacturer	INCHANGE
File Size	239.10 KB
Description	PNP Transistor
Datasheet	MP1620 Datasheet
Additional preview pages of the MP1620 datasheet.

📁 Similar Datasheet

MP1620 - Mold Type Silicon Power Transistor (SanKen)
MP160 - Low Cost Quartz Crystal (CTS)
MP160-E - Low Cost Quartz Crystal (CTS)
MP1600 - Tunnel Diodes (M-Pulse)
MP1601 - Tunnel Diodes (M-Pulse)
MP1601 - Step-Down Converter (MPS)
MP1601A - 1A Synchronous Step-down Converter (MPS)
MP1601AGTF - 1A Synchronous Step-down Converter (MPS)
MP1601GTF - Step-Down Converter (MPS)
MP1602 - Tunnel Diodes (M-Pulse)

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·With TO-3PN packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to type MJH6284 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current -1 A PC Collector Power Dissipation 150 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX

Published: Sep 9, 2020 |