Inchange Semiconductor NJD1718
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | NJD1718 |
|---|---|
| Datasheet | NJD1718 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A)●High Switching speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high-gain audio amplifier and power Switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -50 V -50 V -5 V -2 A -3 A -0.4 A 15 W 1.68 150 ℃ Tstg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX Rth j-c Thermal Resistance, Junction to Case 10 ℃ UNIT ℃/W Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W NJD1718 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherw...