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NJW0302 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor NJW0302.

General Description

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0281 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor NJW0302 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;

IB= 0.5A VBE(on) Base−Emitter On Voltage IC = 5.0 A, VCE = 5.0 V ICBO Collector Cutoff Current VCB= 250V ;

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