900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

NJW1302G Datasheet Preview

NJW1302G Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN packaging
·Reliable performance at higher powers
·Accurate reproduction of Input signal
·Greater dynamic range
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-250
VCEO
VCEX
VEBO
Collector-Emitter Voltage
Collector-Emitter Voltage
VEB= 5V
Emitter-Base Voltage
-250
-250
-5
IC
Collector Current-Continuous
-15
ICM
Collector Current-Peak
-30
IB
Base Current-Continuous
-1.6
PT
Total Power Dissipation
@ TC=25
200
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.63 /W
INCHANGE Semiconductor
NJW1302G
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

NJW1302G Datasheet Preview

NJW1302G Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistors
INCHANGE Semiconductor
NJW1302G
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=- 100mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=- 0.8A
VBE(on) Base-Emitter On Voltage
IC= -8A;VCE= -5V
ICBO
Collector Cutoff Current
VCB=- 250V
ICEO
Collector Cutoff Current
VCE=- 250V
IEBO
Emitter Cutoff Current
VEB=- 5V
hFE-1
DC Current Gain
IC= -0.1A; VCE=-5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -3A; VCE= -5V
hFE-4
DC Current Gain
IC=- 5A; VCE= -5V
hFE-5
DC Current Gain
IC=- 8A; VCE= -5V
MIN TYP. MAX UNIT
-250
V
-0.6
V
-1.5
V
-50 mA
-50 mA
-5
mA
75
150
75
150
75
150
60
45
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number NJW1302G
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

NJW1302G Datasheet PDF





Similar Datasheet

1 NJW1302G NPN-PNP Silicon Power Bipolar Transistors
ON Semiconductor
2 NJW1302G PNP Transistor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy