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NJW1302G Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

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General Description

·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -250 VCEO VCEX VEBO Collector-Emitter Voltage Collector-Emitter Voltage VEB= 5V Emitter-Base Voltage -250 -250 -5 IC Collector Current-Continuous -15 ICM Collector Current-Peak -30 IB Base Current-Continuous -1.6 PT Total Power Dissipation @ TC=25℃ 200 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W INCHANGE Semiconductor NJW1302G isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor NJW1302G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=- 100mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;

IB=- 0.8A VBE(on) Base-Emitter On Voltage IC= -8A;VCE= -5V ICBO Collector Cutoff Current VCB=- 250V ICEO Collector Cutoff Current VCE=- 250V IEBO Emitter Cutoff Current VEB=- 5V hFE-1 DC Current Gain IC= -0.1A;

Overview

isc Silicon PNP Power Transistors.

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