Datasheet Details
| Part number | NTB082N65S3F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 228.89 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 NTB082N65S3F Datasheet
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| Part number | NTB082N65S3F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 228.89 KB |
| Description | N-Channel MOSFET |
| Datasheet |
NTB082N65S3F Datasheet
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·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Voltage: VDSS= 650V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS .
·Industrial power supplies ·UPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 40 A IDM Pulse Drain Current 100 A PD Total Dissipation@TC=25℃ 320 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.39 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor NTB082N65S3F SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F.
| Brand Logo | Part Number | Description | Manufacturer |
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NTB082N65S3F | Power MOSFET | ON Semiconductor |
| Part Number | Description |
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