NTB082N65S3F Description
·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Voltage: VDSS= 650V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS.
- Part: NTB082N65S3F
- Manufacturer: Inchange Semiconductor
- Size: 228.89 KB
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