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NTB082N65S3F - N-Channel MOSFET

General Description

Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V Drain Source Voltage: VDSS= 650V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Industrial power supplies UPS ABSOLUTE MAXIMUM RATINGS(T

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F.