900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

NTB082N65S3F Datasheet Preview

NTB082N65S3F Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
NTB082N65S3F
·DESCRIPTION
·Drain-source on-resistance: RDS(on) ≤ 82m@10V
·Drain Source Voltage: VDSS= 650V(Min)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
.
·Industrial power supplies
·UPS
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
650
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25
40
A
IDM
Pulse Drain Current
100
A
PD
Total Dissipation@TC=25
320
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.39 /W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

NTB082N65S3F Datasheet Preview

NTB082N65S3F Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
INCHANGE Semiconductor
NTB082N65S3F
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS= 20A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=20A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0
MIN TYPE MAX UNIT
650
V
3
5
V
1.3
V
82
mΩ
±100 nA
10
µA
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number NTB082N65S3F
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
PDF Download

NTB082N65S3F Datasheet PDF





Similar Datasheet

1 NTB082N65S3F Power MOSFET
ON Semiconductor
2 NTB082N65S3F N-Channel MOSFET
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy