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NTB082N65S3F - N-Channel MOSFET

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Datasheet Details

Part number NTB082N65S3F
Manufacturer INCHANGE
File Size 228.89 KB
Description N-Channel MOSFET
Datasheet download datasheet NTB082N65S3F-INCHANGE.pdf

NTB082N65S3F Product details

Description

Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V Drain Source Voltage: VDSS= 650V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Industrial power supplies UPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 40 A IDM Pulse Drain Current 100 A PD T

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