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NVD5C648NL - N-Channel MOSFET

NVD5C648NL Description

isc N-Channel MOSFET Transistor NVD5C648NL .

NVD5C648NL Features

* Drain Current
* ID= 89A@ TC=25℃
* Drain Source Voltage- VDSS= 60V(Min)
* Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO

NVD5C648NL Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
NVD5C648NL
Manufacturer
INCHANGE
File Size
260.88 KB
Datasheet
NVD5C648NL-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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