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NVD5C648NL Datasheet Preview

NVD5C648NL Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
NVD5C648NL
FEATURES
·Drain Current –ID= 89A@ TC=25
·Drain Source Voltage-
VDSS= 60V(Min)
·Static Drain-Source On-Resistance
RDS(on) :4.1mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
89
A
IDM
Drain Current-Single Pluse
510
A
PD
Total Dissipation @TC=25
72
W
TJ
Max. Operating Junction Temperature -55~175
Tstg
Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.07
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

NVD5C648NL Datasheet Preview

NVD5C648NL Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 45A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VSD
Forward On-Voltage
IS= 45A; VGS= 0
NVD5C648NL
MIN MAX UNIT
60
V
1.2
2.5
V
4.1
mΩ
±10
uA
10
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number NVD5C648NL
Description N-Channel MOSFET
Maker INCHANGE
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