isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 45A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VSD
Forward On-Voltage
IS= 45A; VGS= 0
NVD5C648NL
MIN MAX UNIT
60
V
1.2
2.5
V
4.1
mΩ
±10
uA
10
μA
1.2
V
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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