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PMBT3904 Datasheet Preview

PMBT3904 Datasheet

NPN Transistor

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isc Silicon NPN Transistor
INCHANGE Semiconductor
PMBT3904
DESCRIPTION
·NPN switching transistor in a SOT23
plastic package
·PNP complement:PMBT3906
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for telephony and professional
communication equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
40
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
100
mA
ICM
Peak Collector Current
PC
Collector Power Dissipation
@TC= 75
TJ
Junction Temperature
200
mA
0.25
W
-65~150
Tstg
Storage Temperature Range
-65~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

PMBT3904 Datasheet Preview

PMBT3904 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Transistor
INCHANGE Semiconductor
PMBT3904
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
50
nA
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
50
nA
hFE-1
DC Current Gain
IC= 10mA ; VCE=1 V
100
300
hFE-2
DC Current Gain
IC= 50mA ; VCE=1 V
60
hFE-3
DC Current Gain
IC= 100mA ; VCE=1 V
30
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
0.3
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 50mA; IB= 5mA
0.95 V
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.35
pF
fT
Current-Gain—Bandwidth Product
Switching times
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 10mA ; VCE= 20V; f= 100MHz 300
IC= 10mA ;IB1=1mA;
VBE(off)=-0.5V; VCC= 3V
IC= 10mA ;IB1=1mA; IB2= -1mA
VCC= 3V
MHz
35
ns
35
ns
200 ns
50
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number PMBT3904
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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PMBT3904 Datasheet PDF





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