Datasheet Details
| Part number | Q6008DH4 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 164.15 KB |
| Description | Triac |
| Datasheet | Q6008DH4-INCHANGE.pdf |
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Overview: isc Thyristors.
| Part number | Q6008DH4 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 164.15 KB |
| Description | Triac |
| Datasheet | Q6008DH4-INCHANGE.pdf |
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·With TO-252( DPAK ) uninsulated packaging ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load Q6008DH4 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current PG(AV) Tj Tstg Average gate power dissipation Operating junction temperature Storage temperature 60HZ 50HZ MAX 600 600 8 85 80 0.5 -40~125 -40~125 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
VD=VDRM Rated;
Tj=25℃ Tj=100℃ Tj=125℃ 0.01 0.5 mA 2 VTM On-state voltage IT=8A 1.6 V Ⅰ 35 IGT Gate-trigger current VD =12V;IT=0.1A;
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