Datasheet Details
| Part number | QM5HG-24 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.82 KB |
| Description | NPN Transistor |
| Datasheet | QM5HG-24-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor QM5HG-24.
| Part number | QM5HG-24 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.82 KB |
| Description | NPN Transistor |
| Datasheet | QM5HG-24-INCHANGE.pdf |
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·High Power Handling capacity ·High Collector-Base Voltage- : VCBO= 1200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Base driver for High voltage transistor modules ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEX Collector-Emitter Voltage 1200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 100 W -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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QM5HG-24 | Transistor | Mitsubishi Electric Semiconductor |
| Part Number | Description |
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